Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups

ABSTRACT

Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part claiming priority under 35USC 120 from U.S. patent application Ser. No. 10/672,311, filed on Sep.26, 2003, titled “METHOD OF POROGEN REMOVAL FROM POROUS LOW-K FILMSUSING UV RADIATION,” by Tipton et al. as inventors, which is acontinuation-in-part of U.S. patent application Ser. No. 10/404,693,filed on Mar. 31, 2003, titled “METHOD FOR FORMING POROUS FILMS BYPOROGEN REMOVAL COMBINED WITH IN SITU SURFACE MODIFICATION,” by Humayunet al. as inventors, which applications are incorporated herein byreference in their entireties for all purposes. This application is alsorelated to U.S. patent application Ser. No. 10/789,103, filed on Feb.27, 2004, entitled “METHODS FOR PRODUCING LOW-K CDO FILMS WITH LOWRESIDUAL STRESS” by Wu et al. as inventors, which application isincorporated herein by reference in its entirety for all purposes.

FIELD OF THE INVENTION

This invention relates to methods for preparing a porous low-k filmhaving low tensile stress and high mechanical strength. The methodsinvolve the use of porogen technology. More specifically, the methodsinvolve the deposition of a precursor film using one or more precursorswith organic functional groups. Functional groups include moieties withcarbon-carbon double or triple bonds and bulky organic groups. Once theprecursor film is formed, the porogen is removed, leaving a low-k porousfilm. Methods of the invention provide a low stress, low-k porous filmthat can be used as a low-k dielectric layer in integrated circuits.

BACKGROUND

There is a general need for materials with low dielectric constants(low-k) in the integrated circuit manufacturing industry. Using low-kmaterials as the inter-metal and/or inter-layer dielectric of conductiveinterconnects reduces the delay in signal propagation due to capacitiveeffects. The lower the dielectric constant of the dielectric, the lowerthe capacitance of the dielectric and the lower the RC delay of the IC.

Low k dielectrics are conventionally defined as those materials thathave a dielectric constant lower than that of silicon dioxide, that isk<˜14. Typical methods of obtaining low-k materials include dopingsilicon dioxide with various hydrocarbons or fluorine. These dopingmethods, however, generally cannot produce materials with dielectricconstants lower than about 2.6. With more and more advanced technologyneeds, present efforts are focused on developing low-k dielectricmaterials with k less than 2.5. These ultra low-k dielectrics can beobtained by incorporating air voids within a low-k dielectric, creatinga porous dielectric material.

Methods of fabricating porous dielectrics typically involve forming acomposite film (sometimes referred to herein as a “precursor film”)containing two components: a porogen (typically an organic material suchas a polymer) and a structure former or dielectric material (e.g., asilicon containing material). Once the composite film is formed on thesubstrate, the porogen component is removed, leaving a structurallyintact porous dielectric matrix. Techniques for removing porogens fromthe composite film typically include, for example, a thermal process inwhich the substrate is heated to a temperature sufficient for thebreakdown and vaporization of the organic porogen.

One issue with producing low-k porous materials relates to the fact thatgenerally the more porous the material is (that is, the more air voidswithin the dielectric matrix), the lower the dielectric constant. Ingeneral, a lower dielectric constant is desirable. However,incorporating air voids may also diminish the film's mechanical strengthand integrity, including increasing the film's intrinsic residualstress.

What are needed therefore are improved methods for forming porousdielectric low-k films with reduced tensile stress and improvedmechanical integrity.

SUMMARY

The present invention addresses the aforementioned need by providingimproved methods of preparing a low stress, low-k dielectric material ona substrate using precursors with various functional groups. In somepreferred embodiments of the present invention, methods involve (a)forming a precursor film on the substrate, the precursor film comprisinga porogen and a structure former, wherein the structure former has oneor more carbon-carbon double or triple bonds, and (b) treating theprecursor film to facilitate removing the porogen from the precursorfilm and thereby creating voids within the dielectric material to formthe porous low-k dielectric material. In some preferred embodiments,methods involve (a) forming a precursor film on the substrate, theprecursor film comprising a porogen and a structure former, wherein theporogen has at least one bulky organic functional group, and (b)treating the precursor film to facilitate removing the porogen from theprecursor film and thereby creating voids within the dielectric materialto form the porous low-k dielectric material.

In most cases, the structure former will contain derivatives of silicon.The precursor film can be produced by co-depositing the structure formerprecursor with a porogen precursor or the structure former and porogencan both be obtained from the structure former precursor and no separateporogen precursor is deposited with the structure former precursor.

Examples of suitable structure former precursors that contain C≡C and/orC═C include trimethylsilylacetylene (TMSA), bis(trimethylsilyl)acetylene(BTMSA), triethynylcyclotrisiloxane derivatives,trivinylcyclotrisiloxane derivatives, vinylmethyldimethoxysilane(VMDMOS), methyldimethoxysilaneacetylene (MDMSA),methyldiethoxysilaneacetylene (MDESA), dimethylmethoxysilaneacetylene(DMMSA), dimethylethoxysilaneacetylene (DMESA),methylethoxysilane-di-acetylene (MESDA), divinylmethylethoxysilane(DVMEOS), 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (VMTS) and1,3,5-trivinyl-1,3,5-triisopropylcyclotrisiloxane (VPTS). The structureformer precursor may also have a bulky organic group. Examples of thesebulky organic structure former precursors include, for example,5-(bicycloheptenyl)methyldimethoxysilane (BMDS),5-(bicycloheptenyl)triethoxysilane (BTS) and5-(bicycloheptenyl)diethoxysilaneacetylene (BDS).

The porogen precursor is preferably an organic material that can beeasily removed by subsequent processes. One preferred class of porogenprecursor is polyfunctional cyclic non-aromatic compounds. Morepreferably, the polyfunctional cyclic non-aromatic compounds alsocontains at least one carbon-carbon triple or double bond. Particularexamples of preferred compounds are 5-ethylidene-2-norbornene (ENB),8,8-dimethylfulvene (DMF) and beta-pinene (BP).

The precursor film can be formed using a CVD process (e.g., a plasmaenhanced chemical vapor deposition (PECVD) technique), a spin-onprocess, or another condensed phase method. In preferred embodiments,PECVD techniques are used. For PECVD methods, preferred depositiontemperatures typically range between about 25 and 400 degrees Celsius,more preferably between about 100 and 300 degrees Celsius. After theprecursor film is formed, treatments such as thermal treatment, plasmatreatment, ultraviolet radiation exposure, e-beam exposure, or acombination thereof are used to facilitate removal of the porogen.

These and other features and advantages of the invention will bedescribed in detail below with reference to the associated drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following detailed description can be more fully understood whenconsidered in conjunction with the drawings in which:

FIGS. 1A and 1B are graphs representing percent porosity and pore sizeas functions of dielectric constant (k) of porous films prepared usingmethods of the inventions.

FIGS. 2A-2C are graphs representing the affects of using differentprecursor concentration on the dielectric constant, amount of porogenand residual film stress for porous films.

FIG. 3 is a graph representing is a graph representing the affects ofusing different concentrations of structure former precursors on therefractive indexes of porous films.

FIGS. 4A and 4B are graphs representing the affects of using differentprecursor flow rates on the dielectric constant and refractive index ofporous films.

FIGS. 5A and 5B are graphs representing the affects of using differentdeposition temperatures on dielectric constant and refractive index ofporous films.

FIG. 6 is a composite graph of three FTIR spectra, one of a precursorfilm before porogen removal, another of a precursor film after porogenremoval using a thermal process, and the third of a precursor film afterporogen removal with UV radiation.

FIG. 7 is a schematic representation of apparatus suitable for porogenremoval in accordance with certain embodiments of this invention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

Introduction

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention,which pertains to formation of porous dielectric materials. The presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail to not unnecessarily obscure the present invention.While the invention will be described in conjunction with the specificembodiments, it will be understood that it is not intended to limit theinvention to the embodiments.

The present invention involves forming a porous low-k dielectricmaterial by way of a “precursor film” or “precursor layer” that containsa “structure former,” typically a silicon and oxide containingdielectric material, which serves as a backbone of the porous network,and a porogen, which generates the porous regions within the porousnetwork. Hence, the porogen and dielectric matrix typically exist asseparate phases within the precursor layer. After the precursor film isformed, the porogen is removed from the precursor film to create adielectric matrix or porous film. Thus, the locations within theprecursor film where the porogen once resided become void locations inthe final porous dielectric film.

In methods of the invention, there are two general approaches to formingthe precursor film. Both of these approaches should be kept in mind asviable techniques that can be used in accordance with methods of theinvention. In one approach, a structure former precursor and a porogenprecursor is co-deposited on a substrate to create the precursor film.The structure former precursor and porogen precursor may be co-depositedin one process or in a multiple-phase process. Of course, more than onetype of structure former precursor molecule and more than one type ofporogen precursor molecule may be used in any suitable combination. Inan alternative approach, the structure former precursor comprises boththe structure former and porogen. That is, the structure formerprecursor contains moieties serving as structure formers covalentlybonded to moieties, preferably large bulky organic constituents, servingas the porogen. Thus, in the latter approach, the structure formerprecursor can be deposited without a separate porogen precursor to formthe precursor layer. Also in the latter approach, more than one type orstructure former precursor may be used to form the precursor film.

The present invention involves producing low-k porous dielectric filmwith improved film mechanical integrity. One measure of mechanicalintegrity is residual stress. Residual stress is comprised of anextrinsic stress component and an intrinsic stress component. Extrinsicstress is produced from a source external to the film. In integratedcircuits, extrinsic stress is typically caused by the mismatch inthermo-mechanical properties between a dielectric layer and theunderlying substrate, especially a mismatch in their thermal expansioncoefficients. Lowering deposition temperature will minimize theextrinsic stress in a film, as will a smaller mismatch in coefficientsof thermal expansion between the film and the substrate. Intrinsicstress can be traced to the film-growth mechanism and the final latticestructure of the dielectric material. From a materials standpoint, theintrinsic stress in porous dielectric films is determined by theintegrity of the dielectric backbone structure. The present inventionprimarily focuses on improving the intrinsic stress of the porous filmwhile maintaining a low dielectric constant.

As indicated previously, the precursor layer comprises a structureformer and porogen. In some preferred embodiments of the presentinvention, the structure former includes at least two carbon atoms thatare double or triple bonded. In these cases, the carbon-carbon doubleand triple bonds are preferably directly adjacent to the silicon atom inthe structure former precursor. Many different chemical compositions maybe used as the structure former precursor. In most cases, the structureformer precursor includes at least silicon and oxygen since in manycases the network backbone is silicon oxide based. The structure formerprecursor may also include other elements such as halides. Forrelatively thick precursor layers, it will sometimes be desirable to usestructure formers that are not opaque to the UV radiation if UVradiation methods are used to subsequently remove the porogen.

Examples of preferred structure former precursors include variousorganic silanes and organic siloxanes. Some specific examples ofsuitable structure former precursor with carbon-carbon double bondsinclude trivinylcyclotrisiloxane derivatives,tetravinylcyclotetrasiloxane derivatives, vinylmethyldimethoxysilane(VMDMOS) and divinylmethylethoxysilane (DVMEOS). Some specific examplesof suitable structure former precursor with carbon-carbon triple bondsinclude triethynylcyclotrisiloxane derivatives, trimethylsilylacetylene(TMSA), bis(trimethylsilyl)acetylene (BTMSA),methyldimethoxysilaneacetylene (MDMSA), methyldiethoxysilaneacetylene(MDESA), dimethylmethoxysilaneacetylene (DMMSA),dimethylethoxysilaneacetylene (DMESA), methylethoxysilane-di-acetylene(MESDA), 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (VMTS) and1,3,5-trivinyl-1,3,5-triisopropylcyclotrisiloxane (VPTS). In some cases,the structure former precursor additionally contains bulky organicfunctional groups. Once deposited, the bulky organic functional groupswill be considered part of the porogen in the precursor film since theywill also be removed to leave void regions in the resultant porous film.As such, these structure former precursors that contain bulky organicfunctional groups may be deposited with or without a porogen precursor.Examples of these types of structure former precursors include5-(bicycloheptenyl)methyldimethoxysilane (BMDS),5-(bicycloheptenyl)triethoxysilane (BTS) and5-(bicycloheptenyl)diethoxysilaneacetylene (BDS).

Although not wishing to be bound by theory, it is believed thatcarbon-carbon double and triple bonds as part of the structure formerprecursor promotes cross-linking, i.e., polymerization, within thestructure former, which has been found to strengthen the integrity ofthe dielectric backbone and reduce internal stress of the film. It isbelieved that the carbon-carbon double and/or triple bonds promotecross-linking by introducing additional bonds of different length, bondsof different angles. And, in fact, it has been found through thisinvention that intrinsic stress can be reduced by incorporatingcarbon-carbon double and/or triple bonds. Some more details as to howcarbon-carbon double and triple bonds relate to the intrinsic stress andother mechanical properties of a non-porous dielectric materials can befound in the previously mentioned U.S. patent application Ser. No.10/789,103, which is incorporated herein in its entirety.

Regarding the porogen, generally, a porogen is any removable materialthat defines void regions in a dielectric matrix. Frequently, though notnecessarily, the porogen and corresponding porogen precursor are organicmaterials. One preferred class of porogen precursors is thepolyfunctional cyclic non-aromatic compounds. In particular, the porogenprecursor will preferably include functional groups such as —CH═CH₂,—CH═CH—, —C

H, —C

—, —C═O and/or —COC—. One class of suitable compounds is norbornenes,such as 5-ethylidene-2-norbornene (ENB). Another typical example is1,2,3,4-tetramethyl-1,3-cyclopentadiene (TMCP) (C₉H₁₄). A listing ofmore porogen precursor compounds can be found in U.S. patent applicationSer. No. 10/672,311, which the present application is acontinuation-in-part and which is incorporated herein in its entirety.

In some preferred embodiments of the present invention, the porogen hasat least one bulky organic functional group. The bulky organic groupcould originate from the structure former precursor, as mentionedpreviously, or it could originate from the porogen precursor, if aporogen precursor is used. In other cases, both the structure formerprecursor and the porogen precursor have bulky organic groups. The bulkyorganic group will leave correspondingly sized pores in the resultingdielectric film. As such, to a large degree, one can choose the size ofpores and the amount of void regions within the final porous film by thetype and size of organic groups incorporated in the precursor film. Itis generally desirable that the voids, and therefore the organicportions, i.e., porogen, be evenly distributed throughout the porousmaterial and, to a certain extent, to be sufficiently large so as toincorporate more air in the film and thereby lower the overalldielectric constant of the film. Of course, the adding voids that aretoo large or that are not evenly distributed will sacrifice theintegrity of the film. As known in the art, numerous suitable compoundscan be classified as having bulky organic constituents, including thosecompounds having large linear or cyclic groups. In preferredembodiments, the bulky organic groups are three-dimensionalpolyfunctional groups that are spherical in shape. Examples of somepreferable compounds include norbornenes, such as5-ethylidene-2-norbornene (ENB). Other specific examples include8,8-dimethylfulvene (DMF) and beta-pinene (BP). Some affects of usingvarious porogen precursors on pore size, porogen concentration anddielectric constant are described by FIGS. 1A, 1B, 2A, 3A, 4A andcorresponding descriptions below.

In certain preferred embodiments, the structure former includes at leasttwo carbon atoms that are double or triple bonded and one or both of thestructure former and/or porogen has at least one bulky organicfunctional group. In these cases, the residual stress reduction providedby the carbon-carbon double and/or triple bonds in the structure formerprecursor is combined with the low-k properties provided by the largeporous regions left by the bulky organic groups.

Regarding techniques for depositing the precursor film, any of numeroustechniques may be used. Typical methods include spin-coating processes,print-on, dip coating, thermal process and chemical vapordeposition—particularly plasma enhanced chemical vapor deposition(PECVD). Depending on the application, the thickness of the precursorfilm may range between about 30 nanometers and about 5 micrometers.Details of suitable deposition techniques are described in thecross-referenced and related references cited above and which areincorporated herein in their entireties. In preferred embodiments of thepresent invention, PECVD methods are utilized. It is noted that theinvention is not limited to any particular type of deposition method. IfPECVD processes are used, the deposition temperatures typically rangebetween about 25 and about 450 degrees Celsius and chamber pressurestypically range between about 1 Torr to 10 Torr. Of course, numerousfactors dictate optimal deposition temperatures, gas flow rates andother process parameters.

The thickness of the precursor film (and hence the resulting porousdielectric layer) depends upon the ultimate application. As an example,the thickness may range between about 50 to 1500 angstroms for a hardmask application. For an interlayer dielectric or packaging application,the thickness may range up to about 0.1 to 5 microns. In some cases,extra thickness is required to provide some amount of sacrificialdielectric to accommodate a subsequent planarization step. In somecases, the thickness of the precursor layer may be driven in part by theability of the UV radiation to penetrate the film and remove theporogen. Therefore relatively thinner precursor layers may be requiredfor some processes.

Any suitable method may be used to remove the porogen from the precursorfilm. Preferred methods generally involve treating precursor film insuch a manner that the porogen is at least partially decomposed and thedecomposition products are volatilized away from the deposited precursorfilm. Typical methods include, for example, thermal processes (both slowand rapid), UV mediated methods wherein the precursor film is exposed toUV light, and e-beam methods. Note, however, the invention is notlimited to any particular type of porogen removal method. For example,liquid solvent techniques may also be used. Note that the precursorlayer formation and porogen removal operations can be conducted in asingle vessel or in two separate vessels. Also, it is possible for aprecursor layer formation and porogen removal to occur in one chamberand then for the substrate to be moved to a different chamber where moreof the porogen is removed. In general, however, for mechanicalsimplicity, it is preferred to perform as many operations as possible ina single chamber.

After porogen removal, the resultant porous dielectric film willpreferably have a dielectric constant less than about 2.7, preferablyless than 2.5, and the low tensile stress, as measured by a Tencor FLX5400 Automated Thin Film Stress Measurement System, will preferably beless than about 50 MPa.

Note that after the porogen is removed, any number of post porogenremoval treatments may be implemented on the porous film. For example, asilanol capping process to replace dangling hydroxyl groups withnon-polar groups (e.g., alkyl groups) and help the film maintain a lowoverall dielectric constant may be used. Details of some examplesuitable silanol capping methods are described in U.S. patentapplication Ser. No. 10/672,311, which the present application is acontinuation-in-part and which is incorporated herein in its entirety.

EXAMPLES

The following examples, Examples 1-6, are presented to help illustrateaspects of the invention. It should be understood that these examplesare representative only, and that the invention is not limited by thedetail set forth in these examples. Note also that the followingexamples are merely experimental and do not necessarily representoptimized conditions for preparing low-k, low stress porous films.

Example 1 illustrates eight porous films (Films A-F) prepared usingdifferent structure former precursors and porogen precursors (if used)using methods in accordance with the invention. Examples 2-6 illustratethe affects of using various process parameters such as precursorconcentrations, flow rates, deposition temperatures and porogen removaltechniques to prepare porous films.

Example 1

The following porous films (Films A-F) have been formed using methods inaccordance with the invention. In some cases, the films were preparedusing a structure former precursor without double or triplecarbon-carbon bonds (e.g., DEMS, TMCTS) but with a porogen precursorwith a bulky organic group (e.g., ENB, BP) (see Films A, D, E and F). Aspreviously described, ENB and BP porogen precursors have polyfunctionalgroups, which can extend their structures in three dimensions and formspherically-shaped, bulky functional polymer. In one case, the film wasprepared using a structure former precursor with double or triplecarbon-carbon bonds (i.e., BTMSA) and no porogen precursor was used (seeFilm B below). And in one case, the film was prepared using a structureformer precursor with double or triple carbon-carbon bonds (i.e., BTMSA)with a porogen precursor having a bulky organic group (i.e., ENB) (seeFilm C below). The following are descriptions of the precursorcompositions and processes conditions for preparing Films A-F, withresulting k values and intrinsic stress/hardness values. In allexamples, PECVD methods were used to deposit the precursor films and UVexposure methods were used to remove the porogen to form the porousfilms.

Films A1, A2 and A3: Three porous films, A1, A2 and A3, were preparedwith the following precursors and process conditions using differentamounts of porogen precursor and structure former precursor. Precursors:DEMS structure former precursor and ENB is a porogen precursor.Deposition conditions: high frequency RF power of 2500 Watts, ENB flowrate of 3 ccm, DEMS at a flow rate of 2 ccm, CO₂ flow rate of 6000 sccm,chamber pressure kept at 9.5 Torr, and deposition temperature of 250degrees Celsius. Porogen removal conditions: UV exposure for 7 minutes.FIGS. 1A and 1B are graphs showing % porosity and pore size,respectively, as functions of the dielectric constant (k) of resultingporous films. As shown, the percent porosity in the film decreased withincreasing k. This is an expected result since increasing the totalamount of air voids within the film is expected to decrease the k of thefilm. In this example, the pore size decreases slightly with increasingk.

Film B: Precursors: BTMSA structure former precursor only. Depositionconditions: high frequency RF power of 2200 Watts, BTMSA flow rate of1.5 ccm, CO₂ flow rate of 3000 sccm, chamber pressure kept at 7.5 Torr,and deposition temperature of 350 degrees Celsius. Porogen removalconditions: UV exposure for 2.5 minutes. The resulting porous film had ak value of 2.50.

Film C: Precursors: BTMSA structure former precursor and ENB porogenprecursor. Deposition conditions: high frequency RF power of 1200 Wattsand low frequency RF of 300 Watts, BTMSA flow rate of 2 ccm, ENB flowrate of 1 ccm, CO₂ flow rate of 3000 sccm, chamber pressure kept at 7Torr, and deposition temperature of 285 degrees Celsius. Porogen removalconditions: Thermal treatment for 4 hours. The resulting porous film hada k value of 2.55 and intrinsic stress value of 46 MPa.

Film D: Precursors: DEMS structure former precursor and ENB porogenprecursor. Deposition conditions: high frequency RF power of 2500 Watts,DEMS flow rate of 2 ccm, ENB flow rate of 2 ccm, CO₂ flow rate of 6000sccm, chamber pressure kept at 9.5 Torr, and deposition temperature of250 degrees Celsius. Porogen removal conditions: Thermal treatment for 4hours, resulting k value of 2.37. Post-porogen removal treatment: UVexposure (1.75 W/cm²) for 4 minutes. The resulting porous film had a kvalue of 2.39 and hardness value of 1.4 GPa.

Film E: Precursors: TMCTS structure former precursor and ENB porogenprecursor. Deposition conditions: high frequency RF power of 1200 Watts,TMCTS flow rate of 1 ccm, ENB flow rate of 0.5 ccm, CO₂ flow rate of5000 sccm, chamber pressure kept at 6 Torr, and substrate temperature of70 degrees Celsius. Porogen removal conditions: Thermal treatment. Theresulting porous film had a k value of 2.48.

Film F: Precursors: TMCTS structure former precursor and BP porogenprecursor. Deposition conditions: high frequency RF power of 1000 Watts,TMCTS flow rate of 1 ccm, BP flow rate of 2 ccm, CO₂ flow rate of 7000sccm, chamber pressure kept at 7.5 Torr. Porogen removal conditions:Thermal treatment. The resulting porous film had a k value of 2.5.

Example 2

FIGS. 2A, 2B and 2C are graphs showing the affects of using differentprecursor concentrations of eight sample films. DEMS was used as thestructure former precursor and ENB was used as the porogen precursor ineach of the eight samples. The amount of ENB to DEMS ([ENB]/[DEMS])ranged in value from 0 to about 1.6. All samples were treated withthermal treatments at 425 degrees Celsius for 4 hours to remove porogen.FIG. 2A shows that the k value of resulting porous films decreased withincreasing amounts of ENB (CxHy) porogen precursor. Specifically, the kvalues decreased from about 2.75 to about 2.29 as [CxHy]/[SiOCH]increased from 0 to about 1.6. This decrease in k can be attributed tothe increasing pore volume percentage since more porogen precursor wasused. FIG. 2B shows the amount of CH_(x) species relative to the amountof SiO species in the resulting porous films, as measured by FTIR. Thisgraph shows that [CH_(x)]/[SiO] increased with increasing [CxHy]/[SiOCH]for the as-deposited (pre-porogen removal) film and that [CH_(x)]/[SiO]remained about the same (i.e., about 4%) with increasing [CxHy]/[SiOCH]after porogen removal. FIG. 2C shows that the intrinsic residual stressdecreases with increasing [CxHy]/[SiOCH]. Specifically, the residualstress decreased from about 60 MPa to about 35 MPa as [CxHy]/[SiOCH]increased from 0 to about 1.6.

Example 3

FIG. 3 is a graph representing the affects of structure former precursorconcentration on the refractive index (RI) of eight sample films. Thesewere the same eight sample films as those used in FIGS. 2A, 2B and 2C.RI is a measure of the opaqueness of the film with increasing RIindicating increasing opaqueness. Note that RI for air (i.e., voidswithin the film) is the least opaque and therefore will have very lowRI. Porogen material is generally more opaque compared to structureformer material. The data of FIG. 3 shows that RI for the as-deposited(pre-porogen removal) films increased with increasing [CxHy]/[SiOCH].After porogen removal, RI decreased with increasing [CxHy]/[SiOCH],which also suggests that the pore volume percentage increases withincreasing [CxHy]/[SiOCH].

Example 4

FIGS. 4A and 4B are graphs showing the affects of using different flowrates of the precursors during PECVD deposition process for five samplefilms. DEMS was used as the structure former precursor and ENB was usedas the porogen precursor in each of the five samples. The total flowrate of ENB and DEMS (1:1 ratio) ranged from about 1.9 ccm to about 4.0ccm. FIG. 4A shows that the k values for the films decreased withinincreasing total flow rate for the as-deposited (pre-porogen removal)films and for the post-porogen removal films. FIG. 4B shows that the RIremained about the same (around 1.45) as total flow rate increased forthe as-deposited film and that the RI slightly decreased as total flowrate increased for the as-deposited film.

Example 5

FIGS. 5A and 5B are graphs showing the affects of using differentdeposition temperatures during PECVD deposition process for four samplefilms. DEMS was used as the structure former precursor and ENB was usedas the porogen precursor in each of the five samples. The depositiontemperatures ranged from about 250 to about 400 degrees Celsius. FIG. 5Ashows that the k values remained within about 2.78 and 2.87 for theas-deposited films and that the k values increased from about 2.46 toabout 2.8 for the post-porogen removal films with increasing depositiontemperatures. FIG. 5B shows that the RI remained decreased from about1.46 to about 1.4 for the as-deposited film and that the RI may haveslightly increased from about 1.37 to about 1.4 for the as-depositedfilm with increasing deposition temperatures.

Example 6

FIG. 6 is a composite graph of three FTIR spectra of film samples beforeporogen removal (spectrum 601), after a thermal treatment (indicated as“post ann.”) for porogen removal (spectrum 603) and after a UV exposuretreatment for porogen removal (spectrum 605). DEMS was used as thestructure former precursor and ENB was used as the porogen precursor forall samples in the same ratios. The thermal treatment involved heatingthe wafer sample to about 425 degrees Celsius for about 4 hours. The UVtreatment involved exposing the wafer sample to broadband UV light of1.75 Watts/cm² for about 4 minutes. All three spectra exhibit absorptionpeaks (607) around 2840 to 3055 cm⁻¹ corresponding to the C—H stretch.Note that larger the C—H peaks indicate that more ENB porogen isincorporated into the film. As shown, both the thermally treated sample(spectrum 603) and the UV treated sample (spectrum 605) exhibitreductions in the C—H stretch peaks compared to the pre-treated film(spectrum 601). It is noted that the UV treated sample (spectrum 605)exhibits more of a decrease in the C—H stretch peaks, indicating moreporogen removal. Also for all three spectra, the peaks (609) at 1273cm⁻¹ are attributed to the presence of Si—CH₃ methyl groups,corresponding to the “T” groups ((SiO)₃Si—CH₃) from the DEMS structureformer precursor. Reduction of this peak 609 indicates that morecross-linking has occurred. As shown, the amplitude of this Si—CH₃ peakwas reduced significantly upon both UV light treatment and thermaltreatment with more reduction with the UV light treatment. The spectraof FIG. 6 suggest that in comparing thermal treatment and UV lighttreatment, UV light treatment was more successful at removing porogenand promoting cross-linking.

Apparatus

The present invention can be implemented in many different types ofapparatus. Generally, the apparatus will include one or more chambers(sometimes referred to as process vessels) that house one or more wafersand are suitable for wafer processing. In some cases, at least onechamber will include a UV source. A single chamber may be employed forall operations of the invention or separate chambers may be used. Eachchamber may house one or more wafers for processing. The one or morechambers maintain the wafer in a defined position or positions (with orwithout motion within that position, e.g. rotation, vibration, or otheragitation) during porogen removal and post porogen removal processessuch as anneal and silanol capping, if used. For certain operations inwhich the wafer is to be heated, the apparatus may include a heatingplaten.

FIG. 7 is a schematic diagram of an example chamber system in accordancewith the invention. This particular system is configured to use UV lightfor the porogen removal process. As stated earlier, the invention is notlimited to any particular porogen removal methods or associatedapparatus. A substrate holder 701 and a UV light source 707 are housedwithin a chamber 700. In alternate embodiments, the light source may bemounted outside the chamber on a window. Chamber 700 is capable ofholding a vacuum and/or containing gases at pressures above atmosphericpressure. Chamber 700 may be one chamber in a multi-chambered system orit may be a stand-alone apparatus. Substrate holder 701 holds substrate703 such that it can be irradiated with light from UV light source 707.Substrate holder 701 has a heater 705 that can heat the substrate todefined temperatures and can be controlled by a temperature controller(not shown).

UV light source 707 is a xenon lamp or other source of UV radiation ofthe required characteristics. As indicated above, the UV light sourcemay be a lamp or a laser (not shown), such as an excimer laser, capableof providing intense UV light. In cases where a laser is used, variousoptical elements may be required to direct the UV light toward portionsof the substrate. Methods for directing the laser light at differentportions of the substrate at different times will be required as well.In a specific embodiment, the UV source directs UV radiation on thesubstrate at an intensity of between about 1 μW/cm² and 10 W/cm² in therange of 200 to 400 nanometers.

Inert gas source 709, such as a nitrogen gas source, can provide inertgas to chamber 700. The amount of inert gas introduced into chamber 700is controlled by valve 711 and is measured by pressure gauge 717. Duringnormal operation, chamber 700 is first evacuated using vacuum pump 719,and then the inert gas or other gas is introduced to a certain chamberpressure. Next, UV light source 707 is turned on and light is directedonto substrate 703. If an oxygen containing process is employed, oxygengas source 713 can provide oxygen to chamber 700 controlled by valve715. Processes involving mixtures of inert gas and oxygen may also beutilized. In cases where UV radiation occurs under vacuum, vacuum pump719 can be used to pump down chamber 700 and UV irradiation can occurwithout the introduction of gas.

Note that the apparatus depicted in FIG. 7 is only an example of asuitable apparatus and other apparatuses designed for other methodsinvolved in previous and/or subsequent processes may be used. Forexample, methods of the invention may be used with a standard PECVDchamber. Some supercritical fluid chamber systems may also be used. Manyof these systems may also be used to perform the post-porogen removalanneal and/or silanol capping procedures, if used. Obviously, in thesecases, the chamber system will likely be pumped out between each of theprocess steps.

While this invention has been described in terms of several embodiments,there are alterations, modifications, permutations, and substituteequivalents, which fall within the scope of this invention. It shouldalso be noted that there are many alternative ways of implementing themethods and apparatuses of the present invention. It is thereforeintended that the following appended claims be interpreted as includingall such alterations, modifications, permutations, and substituteequivalents as fall within the true spirit and scope of the presentinvention. The use of the singular in the claims does not mean “onlyone,” but rather “one or more,” unless otherwise stated in the claims.

1. A method of preparing a porous low-k dielectric material on asubstrate, the method comprising: forming a precursor film on thesubstrate, the precursor film comprising a porogen and a structureformer, wherein the structure former has one or more carbon-carbondouble or triple bonds and the porogen has at least one bulky organicfunctional group and wherein the porogen precursor is a polyfunctionalcyclic non-aromatic compound; and treating the precursor film tofacilitate removing the porogen from the precursor film and therebycreating voids within the dielectric material to form the porous low-kdielectric material.
 2. The method of claim 1, wherein the structureformer comprises silicon.
 3. The method of claim 1, wherein theprecursor film is produced by co-depositing a structure former precursorwith a porogen precursor.
 4. The method of claim 3, wherein thestructure former precursor is a molecule containing at least one siliconatom bonded to a carbon-carbon double bond or a carbon-carbon triplebond.
 5. The method of claim 3, wherein the structure former precursoris trimethylsilylacetylene (TMSA), bis(trimethylsilyl)acetylene (BTMSA),vinylmethyldimethoxysilane (VMDMOS), methyldimethoxysilaneacetylene(MDMSA), methyldiethoxysilaneacetylene (MDESA),dimethylmethoxysilaneacetylene (DMMSA), dimethylethoxysilaneacetylene(DMESA) or methylethoxysilane-di-acetylene (MESDA),divinylmethylethoxysilane (DVMEOS).
 6. The method of claim 3, whereinthe structure former precursor has a bulky organic functional group. 7.The method of claim 6, wherein the structure former precursor is5-(bicycloheptenylo)methyldimethoxysilane (BMDS),5-(bicycloheptenyl)triethoxysilane (BTS) or5-(bicycloheptenyl)diethoxysilaneacetylene (BDS).
 8. The method of claim1, wherein the polyfunctional cyclic non-aromatic compound is5-ethylidene-2-norbornene (ENB), 8,8-dimethylfulvene (DMF) orbeta-pinene (BP).
 9. The method of claim 1, wherein the structure formerand porogen are both obtained from a structure former precursor.
 10. Themethod of claim 9, wherein the structure former precursor has a bulkyorganic group.
 11. The method of claim 10, wherein the structure formerprecursor is 5-(bicycloheptenyl)methyldimethoxysilane (BMDS),5-(bicycloheptenyl)triethoxysilane (BTS) or5-(bicycloheptenyl)diethoxysilaneacetylene (BDS).
 12. The method ofclaim 1, wherein the precursor film is formed by a chemical vapordeposition process.
 13. The method of claim 12, wherein the depositiontemperature during chemical vapor deposition ranges between about 25 andabout 450 degrees Celsius.
 14. The method of claim 1, wherein theprecursor film is formed by a spin-on technique.
 15. The method of claim1, wherein treating the precursor film to facilitate removing theporogen from the precursor film involves a thermal treatment,ultraviolet radiation exposure, e-beam exposure, or a combinationthereof.
 16. The method of claim 1, wherein the dielectric constant ofthe porous low-k dielectric material is less than about 2.7.
 17. Themethod of claim 1, wherein the tensile stress of the porous low-kdielectric material is less than about 55 MPa.
 18. A method of preparinga porous low-k dielectric material on a substrate the method comprising:forming a precursor film on the substrate, the precursor film comprisinga porogen and a structure former, wherein the porogen has at least onebulky organic functional group and wherein the porogen precursor is apolyfunctional cyclic non-aromatic compound; and treating the precursorfilm to facilitate removing the porogen from the precursor film andthereby creating voids within the dielectric material to form the porouslow-k dielectric material.
 19. The method of claim 18, wherein thestructure former comprises silicon.
 20. The method of claim 18, whereinthe precursor film is produced by co-depositing a porogen precursor witha structure former precursor.
 21. The method of claim 20, wherein thestructure former precursor is a molecule containing at least one siliconatom bonded to a carbon-carbon double bond or a carbon-carbon triplebond.
 22. The method of claim 21, wherein the structure former precursoris 5-(bicycloheptenyl)methyldimethoxysilane (BMDS),5-(bicycloheptenyl)triethoxysilane (BTS) or5-(bicycloheptenyl)diethoxysilaneacetylene (BDS).
 23. The method ofclaim 20, wherein the structure former precursor istrimethylsilylacetylene (TMSA), bis(trimethylsilyl)acetylene (BTMSA),vinylmethyldimethoxysilane (VMDMOS), methyldimethoxysilaneacetylene(MDMSA), methyldiethoxysilaneacetylene (MDESA),dimethylmethoxysilaneacetylene (DMMSA), dimethylethoxysilaneacetylene(DMESA), methylethoxysilane-di-acetylene (MESDA),divinylmethylethoxysilane (DVMEOS),1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (VMTS) or1,3,5-trivinyl-1,3,5-triisopropylcyclotrisiloxane (VPTS).
 24. The methodof claim 18, wherein the polyfunctional cyclic non-aromatic compound is5-ethylidene-2-norbornene (ENB), 8,8-dimethylfulvene (DMF) orbeta-pinene (BP).
 25. The method of claim 18, wherein the precursor filmis formed by a chemical vapor deposition process.
 26. The method ofclaim 25, wherein the deposition temperature during chemical vapordeposition ranges between about 25 and about 450 degrees Celsius. 27.The method of claim 18, wherein the precursor film is formed by aspin-on technique.
 28. The method of claim 18, wherein treating theprecursor film to facilitate removing the porogen from the precursorfilm involves a thermal treatment, ultraviolet radiation exposure,e-beam exposure, or a combination thereof.
 29. The method of claim 18,wherein the dielectric constant of the porous low-k dielectric materialis less than about 2.7.
 30. The method of claim 18, wherein the tensilestress of the porous low-k dielectric material is less than about 55MPa.